Package structure and method for manufacturing the same

ABSTRACT

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of and priority to U.S. ProvisionalApplication No. 62/703,768, filed Jul. 26, 2018, the contents of whichare incorporated herein by reference in their entirety.

BACKGROUND 1. Field of the Disclosure

The present disclosure relates to a package structure and amanufacturing method, and to a package structure including a pluralityof transducer devices, and a method for manufacturing the same.

2. Description of the Related Art

Along with the rapid development in electronics industry and theprogress of semiconductor processing technologies, semiconductorpackages are integrated with an increasing number of electronic devicesto achieve improved electrical performance and additional functions.Some electronic devices having the same function may be integratedtogether to form a module. During a manufacturing process, an electricalconnection between the electronic devices in such module is an importantissue. In addition, a thickness of such module may influence a thicknessof a final product (e.g., the semiconductor package); thus, thethickness of such module is also an important issue.

SUMMARY

In some embodiments, a semiconductor package structure includes aplurality of transducer devices, a cap structure, at least oneredistribution layer (RDL) and a protection material. The transducerdevices are disposed side by side. Each of the transducer devices has atleast one transducing region, and includes a die body and at least onetransducing element. The die body has a first surface and a secondsurface opposite to the first surface. The transducing region isdisposed adjacent to the first surface of the die body. The transducingelement is disposed adjacent to the first surface of the die body andwithin the transducing region. The cap structure covers the transducingregion of the transducer device to form an enclosed space. Theredistribution layer (RDL) electrically connects the transducer devices.The protection material covers the transducer devices.

In some embodiments, a method for manufacturing a package structureincludes: (a) disposing a plurality of transducer devices on a carrierside by side, wherein each of the transducer devices has at least onetransducing region, and includes a die body and at least one transducingelement, the die body has a first surface and a second surface oppositeto the first surface, the transducing region is disposed adjacent to thefirst surface of the die body, the transducing element is disposedadjacent to the first surface of the die body and within the transducingregion; (b) forming a protection material to cover the transducerdevices; (c) forming a cap structure to cover the transducing region ofthe transducer device to form an enclosed space; and (d) forming atleast one redistribution layer (RDL) to electrically connecting thetransducer devices.

In some embodiments, a method for manufacturing a package structureincludes: (a) forming at least one redistribution layer (RDL) on acarrier; (b) electrically connecting a plurality of transducer devicesto the redistribution layer (RDL), wherein each of the transducerdevices has at least one transducing region, and includes a die body, atleast one transducing element and a cap structure, wherein the die bodyhas a first surface and a second surface opposite to the first surface,the transducing region is disposed adjacent to the first surface of thedie body, the transducing element is disposed adjacent to the firstsurface of the die body and within the transducing region, and the capstructure covers the transducing region of the transducer device to forman enclosed space; and (c) forming a protection material to cover thetransducer devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are readilyunderstood from the following detailed description when read with theaccompanying figures. It is noted that various structures may not bedrawn to scale, and dimensions of the various structures may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a top view of a transducer device according to someembodiments of the present disclosure, wherein an insulation layer isomitted for the purpose of the clear explanation.

FIG. 2 illustrates an enlarged view of an area “A” shown in FIG. 1.

FIG. 3 illustrates a cross-sectional view of the transducer device ofFIG. 1.

FIG. 4 illustrates a cross-sectional view of a transducer deviceaccording to some embodiments of the present disclosure.

FIG. 5 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 6 illustrates a top view of a second redistribution layer (RDL) ofa package structure according to some embodiments of the presentdisclosure.

FIG. 7 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 8 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 9 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 10 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 11 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 12 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 13 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 14 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 15 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 16 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 17 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 18 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 19 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 20 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 21 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 22 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 23 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 24 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 25 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 26 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 27 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 28 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 29 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 30 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 31 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 32 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 33 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 34 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 35 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 36 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 37 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 38 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 39 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 40 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 41 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 42 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 43 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 44 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 45 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 46 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 47 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 48 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 49 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 50 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 51 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 52 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 53 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 54 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 55 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 56 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 57 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 58 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 59 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 60 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 61 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 62 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 63 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 64 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 65 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 66 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 67 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 68 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 69 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 70 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 71 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 72 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 73 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 74 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar components.Embodiments of the present disclosure will be readily understood fromthe following detailed description taken in conjunction with theaccompanying drawings.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to explain certain aspects of the present disclosure. These are,of course, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed or disposed in direct contact, and mayalso include embodiments in which additional features may be formed ordisposed between the first and second features, such that the first andsecond features may not be in direct contact. In addition, the presentdisclosure may repeat reference numerals and/or letters in the variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between the variousembodiments and/or configurations discussed.

FIG. 1 illustrates a top view of a transducer device 1 according to someembodiments of the present disclosure, wherein an insulation layer isomitted for the purpose of the clear explanation. FIG. 2 illustrates anenlarged view of an area “A” shown in FIG. 1. FIG. 3 illustrates across-sectional view of the transducer device 1 of FIG. 1. Thetransducer device 1 of FIG. 1 to FIG. 3 may be a surface acoustic wave(SAW) filter that may have at least one transducing region 12 and atleast one conductive region 13, and may include a die body 10, at leastone transducing element 14, a first metal layer 15, an insulation layer16 and a second metal layer 17.

The die body 10 has a first surface 101 and a second surface 102opposite to the first surface 101. The die body 10 is a bare die that iscut from a wafer. A material of the die body 10 may be piezoelectricmaterial. The transducing region 12 and the conductive region 13 aredisposed adjacent to the first surface 101 of the die body 10. The firstmetal layer 15 (e.g., a copper layer) is disposed on the first surface101 of the die body 10. A portion of the first metal layer 15 disposedin the transducing region 12 is the transducing element 14, and theother portion of the first metal layer 15 is disposed in the conductiveregion 13. The insulation layer 16 covers and protects the first metallayer 15 in the transducing region 12. The second metal layer 17 (e.g.,a copper layer) is disposed on the portion of the first metal layer 15that is in the conductive region 13 for electrical connection. Thus, thethickness of the metal layers (including the first metal layer 15 andthe second metal layer 17) in the conductive region 13 is greater thanthe thickness of the metal layers (solely including the first metallayer 15) in the transducing region 12. The transducing element 14 isdisposed adjacent to the first surface 101 of the die body 10 and withinthe transducing region 12, and includes at least a pair of inter-digitaltransducer (IDT) electrodes 141. Each of the inter-digital transducer(IDT) electrodes 141 includes a plurality of electrode fingers 1411parallel with each other. For example, each of the inter-digitaltransducer (IDT) electrodes 141 may be in a comb shape. The electrodefingers 1411 of the inter-digital transducer (IDT) electrodes 141 areinterlocking, and are in a fashion of a zipper. It is noted that theelectrode fingers 1411 of the inter-digital transducer (IDT) electrodes141 may not contact each other.

FIG. 4 illustrates a cross-sectional view of a transducer device 2according to some embodiments of the present disclosure. The transducerdevice 2 of FIG. 4 may be a bulk acoustic wave (BAW) filter that mayhave at least one transducing region 22, and may include a die body 20,a first electrode 241 (e.g., copper electrode), a piezoelectric material242, a second electrode 243 (e.g., copper electrode) and at least onetransducing element 24. The die body 20 has a first surface 201 and asecond surface 202 opposite to the first surface 201. The die body 20 isa bare die that is cut from a wafer. A material of the die body 20 maybe silicon. The transducing element 24 is disposed within thetransducing region 22, and includes a portion of the first electrode241, the piezoelectric material 242 and a portion of the secondelectrode 243. The first electrode 241 is disposed adjacent to ordisposed on the first surface 201 of the die body 20, the piezoelectricmaterial 242 is disposed on the first electrode 241, and the secondelectrode 243 is disposed on the piezoelectric material 242. That is,the piezoelectric material 242 is sandwiched between the first electrode241 and the second electrode 243. As shown in FIG. 4, a size of aportion of the second electrode 243 in the transducing region 22 may beequal to the size of the piezoelectric material 242 (both are disposedwithin the transducing region 22), and another portion of the secondelectrode 243 extends to the first surface 201 of the die body 20outside the transducing region 22 for electrical connection. Inaddition, the size of the first electrode 241 is greater than the sizeof the piezoelectric material 242. That is, a portion of the firstelectrode 241 is disposed outside the transducing region 22 forelectrical connection.

FIG. 5 illustrates a cross-sectional view of a package structure 3according to some embodiments of the present disclosure. FIG. 6illustrates a top view of a second redistribution layer (RDL) 35 of thepackage structure 3 according to some embodiments of the presentdisclosure. The package structure 3 includes a plurality of transducerdevices 1, a cap structure 30, a first insulating layer 32, a firstredistribution layer (RDL) 33, a second insulating layer 34, a secondredistribution layer (RDL) 35, a third insulating layer 36, a pluralityof electrical connecting elements 37 and a protection material 38.

The transducer devices 1 are the surface acoustic wave (SAW) filters asshown in FIG. 1 to FIG. 3, and are disposed side by side. The protectionmaterial 38 covers the sidewall of the die body 10 of each of thetransducer devices 1 and the second surface 102 of the die body 10 ofeach of the transducer devices 1. The protection material 38 and has afirst surface 381 corresponding to the first surface 101 of the die body10 and a second surface 382 corresponding to the second surface 102 ofthe die body 10. For example, the protection material 38 may include amolding compound with or without fillers. The first surface 381 of theprotection material 38 may be substantially coplanar with the firstsurface 101 of the die body 10 of each of the transducer devices 1.

The first insulating layer 32 is disposed or formed on the first surface381 of the protection material 38 and the first surface 101 of the diebody 10 of each of the transducer devices 1. The first insulating layer32 defines at least one opening 323 extending through the firstinsulating layer 32 to expose the conductive region 13 of the transducerdevice 1. A material of the first insulating layer 32 may be a polymermaterial, and may include an insulating material, a passivationmaterial, a dielectric material or a solder resist material, such as,for example, a benzocyclobutene (BCB) based polymer or a polyimide (PI).In some embodiments, the first insulating layer 32 may include a curedphotoimageable dielectric (PID) material, such as an epoxy or a PIincluding photoinitiators. In some embodiments, the first insulatinglayer 32 may be formed from a film type material. It is noted that thefirst insulating layer 32 may include a side wall portion 301 of the capstructure 30. That is, the first insulating layer 32 and the side wallportion 301 of the cap structure 30 may be the same layer.

The first redistribution layer (RDL) 33 may be a patterned circuitstructure, and is disposed on the top surface of the first insulatinglayer 32 and in the opening 323 of the first insulating layer 32. Amaterial of the first redistribution layer (RDL) 33 may include copper,and may be formed by, for example, plating. A portion of the firstredistribution layer (RDL) 33 that is disposed in the opening 323 of thefirst insulating layer 32 forms an inner conductive via 333 to contactthe conductive region 13 of the transducer device 1. That is, the firstredistribution layer (RDL) 33 is electrically connected to thetransducer devices 1 through the inner conductive vias 333. It is notedthat the first redistribution layer (RDL) 33 may include a plurality ofconductive traces and a plurality of bonding pads.

The cap structure 30 covers the transducing region 12 of the transducerdevice 1 to form an enclosed space 31. The cap structure 30 includes theside wall portion 301 and a roof portion 302. A material of the roofportion 302 may be the same as or different from the material of thefirst insulating layer 32. A material of the roof portion 302 may be apolymer material, and may include an insulating material, a passivationmaterial, a dielectric material or a solder resist material, such as,for example, a benzocyclobutene (BCB) based polymer or a polyimide (PI).In some embodiments, the roof portion 302 may include a curedphotoimageable dielectric (PID) material, such as an epoxy or a PIincluding photoinitiators. In some embodiments, the roof portion 302 maybe formed from a film type material. The side wall portion 301 surroundsthe transducing region 12, and the roof portion 302 covers the side wallportion 301 completely to form the enclosed space 31. Thus, there may bea boundary between the side wall portion 301 and the roof portion 302.In some embodiments, the enclosed space 31 may be a vacuum.

The second insulating layer 34 is formed or disposed to cover at leastportions of the first insulating layer 32, the first redistributionlayer (RDL) 33 and the roof portion 302. The second insulating layer 34defines at least one opening 343 extending through the second insulatinglayer 34 to expose a portion of the first redistribution layer (RDL) 33.A material of the second insulating layer 34 may be the same as ordifferent from the material of the first insulating layer 32. A materialof the second insulating layer 34 may include an insulating material, apassivation material, a dielectric material or a solder resist material,such as, for example, a benzocyclobutene (BCB) based polymer or apolyimide (PI). In some embodiments, the second insulating layer 34 mayinclude a cured photoimageable dielectric (PID) material, such as anepoxy or a PI including photoinitiators.

The second redistribution layer (RDL) 35 may be a patterned circuitstructure, and is disposed on the top surface of the second insulatinglayer 34 and in the opening 343 of the second insulating layer 34 tocontact or electrically connected to the exposed portion of the firstredistribution layer (RDL) 33. A material of the second redistributionlayer (RDL) 35 may include copper, and may be formed by, for example,plating. In some embodiments, as shown in FIG. 6, the secondredistribution layer (RDL) 35 may include at least one integratedpassive device (IPD) such as an inductor 351. It is noted that the firstredistribution layer (RDL) 33 may also include the integrated passivedevice (IPD) such as an inductor. The inductor may be spiral or helical.

The third insulating layer 36 is formed or disposed to cover at leastportions of the second insulating layer 34 and the second redistributionlayer (RDL) 35. The third insulating layer 36 defines at least oneopening 363 extending through the third insulating layer 36 to expose aportion of the second redistribution layer (RDL) 35. A material of thethird insulating layer 36 may include an insulating material, apassivation material, a dielectric material or a solder resist material,such as, for example, a benzocyclobutene (BCB) based polymer or apolyimide (PI). In some embodiments, the third insulating layer 36 mayinclude a cured photoimageable dielectric (PID) material, such as anepoxy or a PI including photoinitiators.

The electrical connecting element 37 (e.g., solder bump) is attached toand electrically connected to the second redistribution layer (RDL) 35through the opening 363 for external connection.

In the package structure 3 illustrated in FIG. 5, the die body 10 ofeach of the transducer devices 1 is a bare die, thus, the size of thepackage structure 3 can be reduced. In addition, the cap structure 30can protect the transducing region 12 of the transducer device 1.Further, the integrated passive device (IPD) of the secondredistribution layer (RDL) 35 and the first redistribution layer (RDL)33 can achieve the effect of matching and tuning.

FIG. 7 illustrates a cross-sectional view of a package structure 3 aaccording to some embodiments of the present disclosure. The packagestructure 3 a includes a plurality of transducer devices 2, a pluralityof cap structures 30 a, a plurality of periphery conductive vias 303, afirst insulating layer 32, a first redistribution layer (RDL) 33, asecond insulating layer 34, a second redistribution layer (RDL) 35, athird insulating layer 36, a plurality of electrical connecting elements37 and a protection material 38.

The transducer devices 2 are the bulk acoustic wave (BAW) filters asshown in FIG. 4, and are disposed side by side. The cap structure 30 acovers the transducing region 22 of the transducer device 2 to form anenclosed space 31. The cap structure 30 a may be a monolithic structure,and may include a side wall portion 301 a and a roof portion 302 a. Amaterial of the cap structure 30 a may be a polymer material, and mayinclude an insulating material, a passivation material, a dielectricmaterial or a solder resist material, such as, for example, abenzocyclobutene (BCB) based polymer or a polyimide (PI). In someembodiments, the roof portion 302 may include a cured photoimageabledielectric (PID) material, such as an epoxy or a PI includingphotoinitiators. The side wall portion 301 a defines a plurality ofopenings 304 to expose a portion of the first electrode 241 and aportion of the second electrode 243. The periphery conductive vias 303are disposed in the openings 304 to contact and electrically connect theexposed portion of the first electrode 241 and the exposed portion ofthe second electrode 243. As shown in FIG. 7, the top surface of the capstructure 30 a is substantially coplanar with the top ends of theperiphery conductive vias 303.

The protection material 38 covers the sidewall of the die body 20 ofeach of the transducer devices 2, the second surface 202 of the die body20 of each of the transducer devices 2 and the side surface of the capstructure 30 a. The first surface 381 of the protection material 38 maybe substantially coplanar with the top surface of the cap structure 30 aand the top ends of the periphery conductive vias 303.

The first insulating layer 32, the first redistribution layer (RDL) 33,the second insulating layer 34, the second redistribution layer (RDL)35, the third insulating layer 36 and the electrical connecting elements37 are substantially similar to the first insulating layer 32, the firstredistribution layer (RDL) 33, the second insulating layer 34, thesecond redistribution layer (RDL) 35, the third insulating layer 36 andthe electrical connecting elements 37 of FIG. 5, respectively. As shownin FIG. 7, the first insulating layer 32 is disposed or formed on thefirst surface 381 of the protection material 38 and the top surface ofthe cap structure 30 a. In addition, the inner conductive via 333contacts or electrically connects the periphery conductive vias 303.

FIG. 8 illustrates a cross-sectional view of a package structure 3 baccording to some embodiments of the present disclosure. The packagestructure 3 b includes a plurality of transducer devices 1, a pluralityof cap structures 30 b, a bottom redistribution layer (RDL) 39, aplurality of electrical connecting elements 37 and a protection material38.

The transducer devices 1 are the surface acoustic wave (SAW) filters asshown in FIG. 1 to FIG. 3, and are disposed side by side. The protectionmaterial 38 covers the sidewall of the die body 10 of each of thetransducer devices 1 and the second surface 102 of the die body 10 ofeach of the transducer devices 1. The protection material 38 and has afirst surface 381 corresponding to the first surface 101 of the die body10 and a second surface 382 corresponding to the second surface 102 ofthe die body 10. For example, the first surface 381 of the protectionmaterial 38 may be substantially coplanar with the first surface 101 ofthe die body 10 of each of the transducer devices 1.

The cap structure 30 b covers the transducing region 12 of thetransducer device 1 to form an enclosed space 31. The cap structure 30 bmay be a monolithic structure, and may include a side wall portion 301 band a roof portion 302 b. Alternatively, the cap structure 30 b may bethe same as the cap structure 30 of FIG. 5. A material of the capstructure 30 b may include polymer material, ceramic, glass, metal orsemiconductor material.

The bottom redistribution layer (RDL) 39 may electrically connect thetransducer devices 1, and may include a first portion 391, a secondportion 392, a third portion 393 and a fourth portion 394. The firstportion 391 is disposed on and contacts the roof portion 302 b. Thesecond portion 392 is disposed on and contacts the side wall portion 301b. The third portion 393 is disposed on and contacts the conductiveregion 13 of the transducer device 1. The fourth portion 394 is disposedon and contacts the first surface 381 of the protection material 38. Thefourth portion 394 may include the integrated passive device (IPD) suchas an inductor. The electrical connecting elements 37 are disposed onthe first portion 391.

FIG. 9 illustrates a cross-sectional view of a package structure 3 caccording to some embodiments of the present disclosure. The packagestructure 3 c of FIG. 9 may be similar to the package structure 3 ofFIG. 5 except that the second insulating layer 34 and the secondredistribution layer (RDL) 35 are omitted.

FIG. 10 illustrates a cross-sectional view of a package structure 3 daccording to some embodiments of the present disclosure. The packagestructure 3 d includes a plurality of transducer devices 1, a pluralityof cap structures 30 d, a plurality of periphery conductive vias 303 d,a first insulating layer 32, a first redistribution layer (RDL) 33, asecond insulating layer 34, a second redistribution layer (RDL) 35, athird insulating layer 36, a plurality of electrical connecting elements37, a third redistribution layer (RDL) 42, a carrier 40 and a protectionmaterial 38.

The transducer devices 1 are the surface acoustic wave (SAW) filters asshown in FIG. 1 to FIG. 3, and are disposed side by side. The capstructure 30 d covers the transducing region 12 of the transducer device1 to form an enclosed space 31. The cap structure 30 d may be amonolithic structure, and may include a side wall portion 301 d and aroof portion 302 d. Alternatively, the cap structure 30 d may be thesame as the cap structure 30 of FIG. 5. A material of the cap structure30 d may include polymer material, ceramic, glass, metal orsemiconductor material. The side wall portion 301 d defines a pluralityof openings 304 to expose a portion of the conductive region 13 of thetransducer device 1. The periphery conductive vias 303 d are disposed inthe openings 304 to contact and electrically connect the exposed portionof the conductive region 13 of the transducer device 1. As shown in FIG.10, the top ends of the periphery conductive vias 303 d protrude fromthe roof portion 302 d.

The transducer device 1 and the protection material 38 are disposed onthe carrier 40. The second surfaces 102 of the transducer devices 1 andthe second surface 382 of the protection material 38 are attached to asurface of the carrier 40. The protection material 38 covers thesidewall of the die body 10 of each of the transducer devices 1 and thecap structure 30 d. The first surface 381 of the protection material 38may be substantially coplanar with the top surface of the peripheryconductive vias 303 d.

The first insulating layer 32, the first redistribution layer (RDL) 33,the second insulating layer 34, the second redistribution layer (RDL)35, the third insulating layer 36 and the electrical connecting elements37 are substantially similar to the first insulating layer 32, the firstredistribution layer (RDL) 33, the second insulating layer 34, thesecond redistribution layer (RDL) 35, the third insulating layer 36 andthe electrical connecting elements 37 of FIG. 5, respectively. As shownin FIG. 10, the thickness of the first insulating layer 32 issubstantially equal to the thickness of the first redistribution layer(RDL) 33. The third redistribution layer (RDL) 42 may be a patternedcircuit structure, and is disposed on the top surface of the thirdinsulating layer 36 and in the opening 363 of the third insulating layer36 to contact or electrically connected to portions of the secondredistribution layer (RDL) 35. A material of the third redistributionlayer (RDL) 42 may include copper, and may be formed by, for example,plating. The electrical connecting elements 37 are disposed on the thirdredistribution layer (RDL) 42.

FIG. 11 illustrates a cross-sectional view of a package structure 3 eaccording to some embodiments of the present disclosure. The packagestructure 3 e of FIG. 11 may be similar to the package structure 3 d ofFIG. 10 except that the periphery conductive vias 303 d are omitted, anda bottom redistribution layer (RDL) 44 and a plurality of outerconductive vias 46 are further included. In addition, the cap structure30 d of FIG. 10 may be replaced by the cap structure 30 b of FIG. 8. Thebottom redistribution layer (RDL) 44 may electrically connect thetransducer devices 1, and may include a first portion 441, a secondportion 442, and a third portion 443. The first portion 441 is disposedon and contacts the conductive region 13 of the transducer device 1. Thesecond portion 442 is disposed on and contacts the side surface of thedie body 10 of the transducer device 1. The third portion 443 isdisposed on and contacts the surface of the carrier 40. The outerconductive vias 46 extend through the protection material 38, andelectrically connect and contact the third portion 443 and the firstredistribution layer (RDL) 33.

FIG. 12 illustrates a cross-sectional view of a package structure 3 faccording to some embodiments of the present disclosure. The packagestructure 3 f of FIG. 12 may be similar to the package structure 3 a ofFIG. 7, and the differences therebetween are described as follows. Theperiphery conductive vias 303 protrude from the roof portion 302 a. Thefirst redistribution layer (RDL) 33 is embedded in the first insulatinglayer 32 and disposed on the second insulating layer 34 and in theopening 343 of the second insulating layer 34. The second redistributionlayer (RDL) 35 is embedded in the second insulating layer 34 anddisposed on the third insulating layer 36 and in the opening 363 of thethird insulating layer 36. The electrical connecting elements 37 aredisposed on the exposed portions of the second redistribution layer(RDL) 35.

FIG. 13 illustrates a cross-sectional view of a package structure 3 gaccording to some embodiments of the present disclosure. The packagestructure 3 g of FIG. 13 may be similar to the package structure 3 f ofFIG. 12, and the differences therebetween are described as follows. Theperiphery conductive vias 303 of FIG. 12 are omitted, and the capstructures 30 a of FIG. 12 are replaced by the cap structures 30 b. Thepackage structure 3 g of FIG. 13 further includes a plurality ofconductive pillars 50 disposed outside the cap structure 30 b andsurround the cap structure 30 b. The first redistribution layer (RDL) 33is electrically connected to the conductive regions 13 of the transducerdevices 1 through the conductive pillars 50.

FIG. 14 illustrates a cross-sectional view of a package structure 3 haccording to some embodiments of the present disclosure. The packagestructure 3 h of FIG. 14 may be similar to the package structure 3 e ofFIG. 11, and the differences therebetween are described as follows. Thefirst insulating layer 32, the second insulating layer 34, the secondredistribution layer (RDL) 35, the third insulating layer 36 and theelectrical connecting elements 37 are disposed under the transducerdevices 1. That is, the second surfaces of the transducer devices 1 areattached or adhered to the first insulating layer 32. In addition, thefirst redistribution layer (RDL) 33 of FIG. 11 is omitted. The thirdportion 443 of the bottom redistribution layer (RDL) 44 is electricallyconnected to the second redistribution layer (RDL) 35 through theopening 323 of the first insulating layer 32.

FIG. 15 through FIG. 21 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 shown in FIG. 5.

Referring to FIG. 15, a plurality of transducer devices 1 are disposedon or are adhered to a carrier 46 side by side through an adhesion layer48 (or a release layer). The first surface 101 of the die body 10 facesthe carrier 46, and the first metal layer 15 and the second metal layer17 are embedded in the adhesion layer 48.

Referring to FIG. 16, the protection material 38 is formed or disposedon the adhesion layer 48 to cover the transducer devices 1. Theprotection material 38 has a first surface 381 contacting the adhesionlayer 48 and a second surface 382 opposite to the first surface 381.

Referring to FIG. 17, the carrier 46 and the adhesion layer 48 areremoved.

Referring to FIG. 18, the first insulating layer 32 is disposed orformed on the first surface 381 of the protection material 38 and thefirst surface 101 of the die body 10 of each of the transducer devices1. The first insulating layer 32 defines at least one opening 323extending through the first insulating layer 32 to expose the conductiveregion 13 of the transducer device 1. It is noted that the firstinsulating layer 32 may include a side wall portion 301 to expose thetransducing region 12 of the transducer device 1. The side wall portion301 surrounds the transducing region 12 to form a cavity.

Referring to FIG. 19, a roof portion 302 is formed or disposed on theside wall portion 301 to cover the side wall portion 301 and the cavitycompletely to form the cap structure 30 so as to cover the transducingregion 12 of the transducer device 1 to form an enclosed space 31. Thus,there may be a boundary between the side wall portion 301 and the roofportion 302. In some embodiments, the enclosed space 31 may be a vacuum.

Referring to FIG. 20, the first redistribution layer (RDL) 33 is formedor disposed on the top surface of the first insulating layer 32 and inthe opening 323 of the first insulating layer 32. A portion of the firstredistribution layer (RDL) 33 that is disposed in the opening 323 of thefirst insulating layer 32 forms the inner conductive via 333 to contactthe conductive region 13 of the transducer device 1. That is, the firstredistribution layer (RDL) 33 is electrically connected to thetransducer devices 1 through the inner conductive vias 333. It is notedthat the first redistribution layer (RDL) 33 may include a plurality ofconductive traces, a plurality of bonding pads and a plurality ofinductors. Then, the second insulating layer 34 is formed or disposed tocover at least portions of the first insulating layer 32, the firstredistribution layer (RDL) 33 and the roof portion 302. The secondinsulating layer 34 defines at least one opening 343 extending throughthe second insulating layer 34 to expose a portion of the firstredistribution layer (RDL) 33.

Referring to FIG. 21, the second redistribution layer (RDL) 35 isdisposed on the top surface of the second insulating layer 34 and in theopening 343 of the second insulating layer 34 to contact or electricallyconnected to the exposed portion of the first redistribution layer (RDL)33. In some embodiments, the second redistribution layer (RDL) 35 mayinclude at least one integrated passive device (IPD) such as an inductor351. Then, the third insulating layer 36 is formed or disposed to coverat least portions of the second insulating layer 34 and the secondredistribution layer (RDL) 35. The third insulating layer 36 defines atleast one opening 363 extending through the third insulating layer 36 toexpose a portion of the second redistribution layer (RDL) 35. Then, theelectrical connecting element 37 (e.g., solder bump) is attached to andelectrically connected to the second redistribution layer (RDL) 35through the opening 363 for external connection. Then, a singulationprocess is conducted to obtain the package structure 3 of FIG. 5.

FIG. 22 through FIG. 31 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 a shown in FIG. 7.

Referring to FIG. 22, a plurality of units 2′ are provided. The units 2′includes the transducer devices 2 (the bulk acoustic wave (BAW) filtersas shown in FIG. 4), the cap structure 30 a covering the transducingregion 22 of the transducer device 2 and the periphery conductive vias303 disposed in the openings 304 of the side wall portion 301 a tocontact and electrically connect the first electrode 241 and the secondelectrode 243.

Referring to FIG. 23, the units 2′ are disposed on or are adhered to acarrier 46 side by side through an adhesion layer 48. The first surface201 of the die body 20 of the transducer device 2 faces the carrier 46,and the cap structure 30 a contacts the adhesion layer 48.

Referring to FIG. 24, the protection material 38 is formed or disposedon the adhesion layer 48 to cover the units 2′. The protection material38 has a first surface 381 contacting the adhesion layer 48 and a secondsurface 382 opposite to the first surface 381.

Referring to FIG. 25, the carrier 46 and the adhesion layer 48 areremoved.

Referring to FIG. 26, the first insulating layer 32 is disposed orformed on the first surface 381 of the protection material 38 and thetop surfaces of the cap structures 30 a. The first insulating layer 32defines at least one opening 323 extending through the first insulatinglayer 32 to expose the periphery conductive via 303.

Referring to FIG. 27, the first redistribution layer (RDL) 33 is formedor disposed on the top surface of the first insulating layer 32 and inthe opening 323 of the first insulating layer 32. A portion of the firstredistribution layer (RDL) 33 that is disposed in the opening 323 of thefirst insulating layer 32 forms the inner conductive via 333 to contactthe periphery conductive via 303.

Referring to FIG. 28, the second insulating layer 34 is formed ordisposed to cover at least portions of the first insulating layer 32 andthe first redistribution layer (RDL) 33. The second insulating layer 34defines at least one opening 343 extending through the second insulatinglayer 34 to expose a portion of the first redistribution layer (RDL) 33.

Referring to FIG. 29, the second redistribution layer (RDL) 35 isdisposed on the top surface of the second insulating layer 34 and in theopening 343 of the second insulating layer 34 to contact or electricallyconnected to the exposed portion of the first redistribution layer (RDL)33. In some embodiments, the second redistribution layer (RDL) 35 mayinclude at least one integrated passive device (IPD) such as an inductor351.

Referring to FIG. 30, the third insulating layer 36 is formed ordisposed to cover at least portions of the second insulating layer 34and the second redistribution layer (RDL) 35. The third insulating layer36 defines at least one opening 363 extending through the thirdinsulating layer 36 to expose a portion of the second redistributionlayer (RDL) 35.

Referring to FIG. 31, the electrical connecting element 37 (e.g., solderbump) is attached to and electrically connected to the secondredistribution layer (RDL) 35 through the opening 363 for externalconnection. Then, a singulation process is conducted to obtain thepackage structure 3 a of FIG. 7.

FIG. 32 through FIG. 37 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 b shown in FIG. 8.

Referring to FIG. 32, a plurality of transducer devices 1 are disposedon or are adhered to a carrier 46 side by side through an adhesion layer48. The first surface 101 of the die body 10 faces the carrier 46, andthe first metal layer 15 and the second metal layer 17 are embedded inthe adhesion layer 48.

Referring to FIG. 33, the protection material 38 is formed or disposedon the adhesion layer 48 to cover the transducer devices 1. Theprotection material 38 has a first surface 381 contacting the adhesionlayer 48 and a second surface 382 opposite to the first surface 381.

Referring to FIG. 34, the carrier 46 and the adhesion layer 48 areremoved.

Referring to FIG. 35, the cap structure 30 b is formed or disposed tocover the transducing region 12 of the transducer device 1 to form anenclosed space 31. The cap structure 30 b may be a monolithic structure,and may include a side wall portion 301 b and a roof portion 302 b.Alternatively, the cap structure 30 b may be the same as the capstructure 30 of FIG. 19.

Referring to FIG. 36, the bottom redistribution layer (RDL) 39 is formedto electrically connect the transducer devices 1, and may include afirst portion 391, a second portion 392, a third portion 393 and afourth portion 394. The first portion 391 is disposed on and contactsthe roof portion 302 b. The second portion 392 is disposed on andcontacts the side wall portion 301 b. The third portion 393 is disposedon and contacts the conductive region 13 of the transducer device 1. Thefourth portion 394 is disposed on and contacts the first surface 381 ofthe protection material 38. The fourth portion 394 may include theintegrated passive device (IPD) such as an inductor.

Referring to FIG. 37, the electrical connecting elements 37 are disposedon the first portion 391 for external connection. Then, a singulationprocess is conducted to obtain the package structure 3 b of FIG. 8.

FIG. 38 through FIG. 42 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 c shown in FIG. 9.

Referring to FIG. 38, a plurality of transducer devices 1 are disposedon or are adhered to a carrier 46 side by side through an adhesion layer48 (FIG. 15). Then, the protection material 38 is formed or disposed onthe adhesion layer 48 to cover the transducer devices 1 (FIG. 16). Then,the carrier 46 and the adhesion layer 48 are removed.

Referring to FIG. 39, the first insulating layer 32 is disposed orformed on the first surface 381 of the protection material 38 and thefirst surface 101 of the die body 10 of each of the transducer devices1. The first insulating layer 32 defines at least one opening 323extending through the first insulating layer 32 to expose the conductiveregion 13 of the transducer device 1. It is noted that the firstinsulating layer 32 may include a side wall portion 301 to expose thetransducing region 12 of the transducer device 1. The side wall portion301 surrounds the transducing region 12 to form a cavity.

Referring to FIG. 40, a roof portion 302 is formed or disposed on theside wall portion 301 to cover the side wall portion 301 and the cavitycompletely to form the cap structure 30 so as to cover the transducingregion 12 of the transducer device 1 to form an enclosed space 31.

Referring to FIG. 41, the first redistribution layer (RDL) 33 is formedor disposed on the top surface of the first insulating layer 32 and inthe opening 323 of the first insulating layer 32. Then, the thirdinsulating layer 36 is formed or disposed to cover at least portions ofthe first insulating layer 32 and the first redistribution layer (RDL)33. The third insulating layer 36 defines at least one opening 363extending through the third insulating layer 36 to expose a portion ofthe first redistribution layer (RDL) 33.

Referring to FIG. 42, the electrical connecting element 37 (e.g., solderbump) is attached to and electrically connected to the firstredistribution layer (RDL) 35 through the opening 363 for externalconnection. Then, a singulation process is conducted to obtain thepackage structure 3 c of FIG. 9.

FIG. 43 through FIG. 48 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 d shown in FIG. 10.

Referring to FIG. 43, a plurality of transducer devices 1 are disposedon or are adhered to a carrier 40 side by side. The second surface 102of the die body 10 faces and is attached to the carrier 40.

Referring to FIG. 44, the cap structure 30 d is formed or disposed onthe transducer device 1 to cover the transducing region 12 of thetransducer device 1 and to form an enclosed space 31. The cap structure30 d may be a monolithic structure, and may include a side wall portion301 d and a roof portion 302 d. Alternatively, the cap structure 30 dmay be the same as the cap structure 30 of FIG. 40. The side wallportion 301 d defines a plurality of openings 304 to expose a portion ofthe conductive region 13 of the transducer device 1.

Referring to FIG. 45, a plurality of periphery conductive vias 303 d aredisposed in the openings 304 to contact and electrically connect theexposed portion of the conductive region 13 of the transducer device 1.The top ends of the periphery conductive vias 303 d protrude from theroof portion 302 d.

Referring to FIG. 46, the protection material 38 is formed or disposedon the carrier 40 to cover the transducer devices 1. The protectionmaterial 38 has a second surface 382 contacting the carrier 40 and afirst surface 381 opposite to the second surface 382. The second surface382 of the protection material 38 is attached to a surface of thecarrier 40. The protection material 38 covers the sidewall of the diebody 10 of each of the transducer devices 1 and the cap structure 30 d.The first surface 381 of the protection material 38 may be substantiallycoplanar with the top surface of the periphery conductive vias 303 d.

Referring to FIG. 47, the first insulating layer 32, the firstredistribution layer (RDL) 33, the second insulating layer 34, thesecond redistribution layer (RDL) 35, the third insulating layer 36 andthe third redistribution layer (RDL) 42 are formed on the first surface381 of the protection material 38. The thickness of the first insulatinglayer 32 is substantially equal to the thickness of the firstredistribution layer (RDL) 33. The third redistribution layer (RDL) 42may be a patterned circuit structure, and is disposed on the top surfaceof the third insulating layer 36 and in the opening 363 of the thirdinsulating layer 36 to contact or electrically connected to portions ofthe second redistribution layer (RDL) 35.

Referring to FIG. 48, the electrical connecting elements 37 are formedor disposed on the third redistribution layer (RDL) 42 for externalconnection. Then, a singulation process is conducted to obtain thepackage structure 3 d of FIG. 10.

FIG. 49 through FIG. 54 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 e shown in FIG. 11.

Referring to FIG. 49, a plurality of transducer devices 1 are disposedon or are adhered to a carrier 40 side by side. The second surface 102of the die body 10 faces and is attached to the carrier 40.

Referring to FIG. 50, the cap structure 30 b is formed or disposed onthe transducer device 1 to cover the transducing region 12 of thetransducer device 1 and to form an enclosed space 31. The cap structure30 b may be a monolithic structure, and may include a side wall portion301 b and a roof portion 302 b. Alternatively, the cap structure 30 bmay be the same as the cap structure 30 of FIG. 40.

Referring to FIG. 51, a bottom redistribution layer (RDL) 44 is formedto electrically connect the transducer devices 1. The bottomredistribution layer (RDL) 44 includes a first portion 441, a secondportion 442 a third portion 443. The first portion 441 is disposed onand contacts the conductive region 13 of the transducer device 1. Thesecond portion 442 is disposed on and contacts the side surface of thedie body 10 of the transducer device 1. The third portion 443 isdisposed on and contacts the surface of the carrier 40.

Referring to FIG. 52, the protection material 38 is formed or disposedon the carrier 40 to cover the transducer devices 1, the cap structures30 b and the bottom redistribution layer (RDL) 44. The protectionmaterial 38 has a second surface 382 contacting the carrier 40 and afirst surface 381 opposite to the second surface 382. The protectionmaterial 38 covers the sidewall of the die body 10 of each of thetransducer devices 1 and the cap structure 30 b. Then, a plurality ofouter conductive vias 46 are formed to extend through the protectionmaterial 38, and electrically connect and contact the third portion 443of the bottom redistribution layer (RDL) 44.

Referring to FIG. 53, the first insulating layer 32, the firstredistribution layer (RDL) 33, the second insulating layer 34, thesecond redistribution layer (RDL) 35, the third insulating layer 36 andthe third redistribution layer (RDL) 42 are formed on the first surface381 of the protection material 38. The first redistribution layer (RDL)33 contacts the outer conductive vias 46.

Referring to FIG. 54, the electrical connecting elements 37 are formedor disposed on the third redistribution layer (RDL) 42 for externalconnection. Then, a singulation process is conducted to obtain thepackage structure 3 e of FIG. 11.

FIG. 55 through FIG. 61 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 f shown in FIG. 12.

Referring to FIG. 55, the third insulating layer 36 is formed on thecarrier 46. The third insulating layer 36 defines at least one opening363 extending through the third insulating layer 36.

Referring to FIG. 56, the second redistribution layer (RDL) 35 is formedor disposed on the third insulating layer 36 and in the opening 363.Then, the second insulating layer 34 is formed or disposed to cover thethird insulating layer 36 and the second redistribution layer (RDL) 35.The second insulating layer 34 defines at least one opening 343 toexpose a portion of the second redistribution layer (RDL) 35.

Referring to FIG. 57, the first redistribution layer (RDL) 33 is formedor disposed on the second insulating layer 34 and in the opening 343.Then, the first insulating layer 32 is formed or disposed to cover thesecond insulating layer 34 and the first redistribution layer (RDL) 33.The first insulating layer 32 defines at least one opening 323 to exposea portion of the first redistribution layer (RDL) 33.

Referring to FIG. 58, a plurality of units 2″ are provided. The unit 2″is similar to the unit 2′ of FIG. 22 except that the peripheryconductive vias 303 protrude from the roof portion 302 a. Then, theperiphery conductive vias 303 of the units 2″ are attached to theexposed portions of the first redistribution layer (RDL) 33 exposed fromthe opening 323 so that the transducer devices 2 are electricallyconnected to the first redistribution layer (RDL) 33.

Referring to FIG. 59, the protection material 38 is formed or disposedon the first insulating layer 32 to cover the units 2″ (e.g., thetransducer devices 2 and the cap structures 30 a). The protectionmaterial 38 has a first surface 381 contacting the first insulatinglayer 32 and a second surface 382 opposite to the first surface 381.

Referring to FIG. 60, the carrier 46 is removed to expose portions ofthe second redistribution layer (RDL) 35.

Referring to FIG. 61, the electrical connecting elements 37 are formedor disposed on the exposed portions of the second redistribution layer(RDL) 35 for external connection. Then, a singulation process isconducted to obtain the package structure 3 f of FIG. 12.

FIG. 62 through FIG. 69 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 g shown in FIG. 13.

Referring to FIG. 62, a first carrier 52 with a first release layer 56is provided. Then, a bottom metal layer 54 is formed or disposed on thefirst release layer 56. Then, the third insulating layer 36 is formed onthe bottom metal layer 54. The third insulating layer 36 defines atleast one opening 363 extending through the third insulating layer 36.Then, the second insulating layer 34 is formed or disposed on the thirdinsulating layer 36. The second insulating layer 34 defines at least oneopening 343 to expose the opening 363 of the third insulating layer 36.Then, the second redistribution layer (RDL) 35 is formed or disposed onthe third insulating layer 36 and in the opening 363, and in the opening343 of the second insulating layer 34. Then, the first insulating layer32 is formed or disposed to cover the second insulating layer 34 and thesecond redistribution layer (RDL) 35. The first insulating layer 32defines at least one opening 323 to expose a portion of the secondredistribution layer (RDL) 35. Then, the first redistribution layer(RDL) 33 is formed or disposed on the second insulating layer 34 and inthe opening 323 of the first insulating layer 32.

Referring to FIG. 63, a plurality of conductive pillars 50 are form ordisposed on the first redistribution layer (RDL) 33.

Referring to FIG. 64, a second carrier 58 with a second release layer 60is provided. Then, a plurality of transducer devices 1 are disposed onor are adhered to the second release layer 60 of the second carrier 58side by side. The second surface 102 of the die body 10 faces and isattached to the second release layer 60 of the second carrier 58.

Referring to FIG. 65, the cap structure 30 b is formed or disposed tocover the transducing region 12 of the transducer device 1 to form anenclosed space 31. The cap structure 30 b may be a monolithic structure,and may include a side wall portion 301 b and a roof portion 302 b.Alternatively, the cap structure 30 b may be the same as the capstructure 30 of FIG. 40.

Referring to FIG. 66, the structure of FIG. 65 is attached to thestructure of FIG. 63 so that the conductive pillars 50 are disposedoutside the cap structure 30 b and surround the cap structure 30 b.Thus, the first redistribution layer (RDL) 33 is electrically connectedto the conductive regions 13 of the transducer devices 1 through theconductive pillars 50.

Referring to FIG. 67, the second carrier 58 and the second release layer60 are removed.

Referring to FIG. 68, the protection material 38 is formed or disposedon the first insulating layer 32 to cover the transducer devices 1, thecap structures 30 b and the conductive pillars 50. The protectionmaterial 38 has a first surface 381 contacting the first insulatinglayer 32 and a second surface 382 opposite to the first surface 381.

Referring to FIG. 69, the first carrier 52 and the first release layer56 are removed to expose the bottom metal layer 54. Then, the bottommetal layer 54 is patterned to form the third redistribution layer (RDL)42. Then, the electrical connecting elements 37 are formed or disposedon the third redistribution layer (RDL) 42 for external connection.Then, a singulation process is conducted to obtain the package structure3 g of FIG. 13.

FIG. 70 through FIG. 74 illustrate an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure. In some embodiments, the method is for manufacturinga package structure such as the package structure 3 h shown in FIG. 14.

Referring to FIG. 70, a carrier 62 with a release layer 64 is provided.Then, a bottom metal layer 54 is formed or disposed on the release layer64. Then, the third insulating layer 36 is formed on the bottom metallayer 54. The third insulating layer 36 defines at least one opening 363extending through the third insulating layer 36. Then, the secondinsulating layer 34 is formed or disposed on the third insulating layer36. The second insulating layer 34 defines at least one opening 343 toexpose the opening 363. Then, the second redistribution layer (RDL) 35is formed or disposed on the third insulating layer 36 and in theopening 363, and in the opening 343 of the second insulating layer 34.Then, the first insulating layer 32 is formed or disposed to cover thesecond insulating layer 34 and the second redistribution layer (RDL) 35.The first insulating layer 32 defines at least one opening 323 to exposea portion of the second redistribution layer (RDL) 35.

Referring to FIG. 71, a plurality of transducer devices 1 are disposedon or are adhered to the first insulating layer 32 side by side. Thesecond surface 102 of the die body 10 faces the carrier 62 and isattached to the first insulating layer 32.

Referring to FIG. 72, the cap structure 30 b is formed or disposed tocover the transducing region 12 of the transducer device 1 to form anenclosed space 31. The cap structure 30 b may be a monolithic structure,and may include a side wall portion 301 b and a roof portion 302 b.Alternatively, the cap structure 30 b may be the same as the capstructure 30 of FIG. 40.

Referring to FIG. 73, a bottom redistribution layer (RDL) 44 is formedto electrically connect the transducer devices 1. The bottomredistribution layer (RDL) 44 includes a first portion 441, a secondportion 442 a third portion 443. The first portion 441 is disposed onand contacts the conductive region 13 of the transducer device 1. Thesecond portion 442 is disposed on and contacts the side surface of thedie body 10 of the transducer device 1. The third portion 443 isdisposed on the first insulating layer 32. A portion of the thirdportion 443 is disposed in the opening 323 of the first insulating layer32 to electrically connect the second redistribution layer (RDL) 35.Then, the protection material 38 is formed or disposed on the firstinsulating layer 32 to cover the transducer devices 1, the capstructures 30 b and the bottom redistribution layer (RDL) 44. Theprotection material 38 has a first surface 381 contacting the firstinsulating layer 32 and the bottom redistribution layer (RDL) 44 and asecond surface 382 opposite to the first surface 381.

Referring to FIG. 74, the carrier 62 and the release layer 64 areremoved to expose the bottom metal layer 54. Then, the bottom metallayer 54 is patterned to form the third redistribution layer (RDL) 42.Then, the electrical connecting elements 37 are formed or disposed onthe third redistribution layer (RDL) 42 for external connection. Then, asingulation process is conducted to obtain the package structure 3 h ofFIG. 14.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,”“down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,”“lower,” “upper,” “over,” “under,” and so forth, are indicated withrespect to the orientation shown in the figures unless otherwisespecified. It should be understood that the spatial descriptions usedherein are for purposes of illustration only, and that practicalimplementations of the structures described herein can be spatiallyarranged in any orientation or manner, provided that the merits ofembodiments of this disclosure are not deviated from by such anarrangement.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation less thanor equal to ±10% of that numerical value, such as less than or equal to±5%, less than or equal to ±4%, less than or equal to ±3%, less than orequal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%,less than or equal to ±0.1%, or less than or equal to ±0.05%. Forexample, a first numerical value can be deemed to be “substantially” thesame or equal to a second numerical value if the first numerical valueis within a range of variation of less than or equal to ±10% of thesecond numerical value, such as less than or equal to ±5%, less than orequal to ±4%, less than or equal to ±3%, less than or equal to ±2%, lessthan or equal to ±1%, less than or equal to ±0.5%, less than or equal to±0.1%, or less than or equal to ±0.05%. For example, “substantially”perpendicular can refer to a range of angular variation relative to 90°that is less than or equal to ±10°, such as less than or equal to ±5°,less than or equal to ±4°, less than or equal to ±3°, less than or equalto ±2°, less than or equal to ±1°, less than or equal to ±0.5°, lessthan or equal to ±0.1°, or less than or equal to ±0.05°.

Two surfaces can be deemed to be coplanar or substantially coplanar if adisplacement between the two surfaces is no greater than 5 μm, nogreater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm. Asurface can be deemed to be substantially flat if a displacement betweena highest point and a lowest point of the surface is no greater than 5μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5μm.

As used herein, the singular terms “a,” “an,” and “the” may includeplural referents unless the context clearly dictates otherwise.

As used herein, the terms “conductive,” “electrically conductive” and“electrical conductivity” refer to an ability to transport an electriccurrent. Electrically conductive materials typically indicate thosematerials that exhibit little or no opposition to the flow of anelectric current. One measure of electrical conductivity is Siemens permeter (S/m). Typically, an electrically conductive material is onehaving a conductivity greater than approximately 10⁴ S/m, such as atleast 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of amaterial can sometimes vary with temperature. Unless otherwisespecified, the electrical conductivity of a material is measured at roomtemperature.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations are not limiting. It should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of thepresent disclosure as defined by the appended claims. The illustrationsmay not be necessarily drawn to scale. There may be distinctions betweenthe artistic renditions in the present disclosure and the actualapparatus due to manufacturing processes and tolerances. There may beother embodiments of the present disclosure which are not specificallyillustrated. The specification and drawings are to be regarded asillustrative rather than restrictive. Modifications may be made to adapta particular situation, material, composition of matter, method, orprocess to the objective, spirit and scope of the present disclosure.All such modifications are intended to be within the scope of the claimsappended hereto. While the methods disclosed herein have been describedwith reference to particular operations performed in a particular order,it will be understood that these operations may be combined,sub-divided, or re-ordered to form an equivalent method withoutdeparting from the teachings of the present disclosure. Accordingly,unless specifically indicated herein, the order and grouping of theoperations are not limitations of the present disclosure.

What is claimed is:
 1. A package structure, comprising: a plurality oftransducer devices disposed side by side, wherein each of the transducerdevices has at least one transducing region, and includes a die body andat least one transducing element, the die body has a first surface and asecond surface opposite to the first surface, the transducing region isdisposed adjacent to the first surface of the die body, and thetransducing element is disposed adjacent to the first surface of the diebody and within the transducing region; a cap structure covering thetransducing region of the transducer device to form an enclosed space;at least one redistribution layer (RDL) electrically connecting thetransducer devices; and a protection material covering the transducerdevices.
 2. The package structure of claim 1, wherein the transducerdevices are surface acoustic wave (SAW) filters or bulk acoustic wave(BAW) filters.
 3. The package structure of claim 1, wherein each of thetransducer devices is a surface acoustic wave (SAW) filter, a materialof the die body is piezoelectric material, and the transducing elementincludes at least a pair of inter-digital transducer (IDT) electrodesincluding a plurality of electrode fingers.
 4. The package structure ofclaim 1, wherein each of the transducer devices is a bulk acoustic wave(BAW) filter, a material of the die body is silicon, and the transducingelement includes a first electrode disposed adjacent to the firstsurface of the die body, a piezoelectric material disposed on the firstelectrode and a second electrode disposed on the piezoelectric material.5. The package structure of claim 1, wherein a material of the capstructure includes polymer.
 6. The package structure of claim 1, whereina material of the cap structure includes a cured photoimageabledielectric (PID) material.
 7. The package structure of claim 1, whereinthe cap structure includes a side wall portion and a roof portion, theside wall portion surrounds the transducing region, and the roof portioncovers the side wall portion completely to form the enclosed space. 8.The package structure of claim 1, wherein a boundary is between the sidewall portion and the roof portion.
 9. The package structure of claim 1,wherein the redistribution layer (RDL) is electrically connected to thetransducer devices through a plurality of inner conductive vias.
 10. Thepackage structure of claim 1, wherein a first portion of theredistribution layer (RDL) contacts a conductive region of thetransducer device, a second portion of the redistribution layer (RDL)contacts a side surface of the transducer device, and a third portion ofthe redistribution layer (RDL) is disposed on the protection material.11. The package structure of claim 1, wherein the redistribution layer(RDL) is electrically connected to the transducer devices through aplurality of conductive pillars.
 12. The package structure of claim 1,wherein the protection material has a first surface and a second surfaceopposite to the first surface, the package structure further comprises afirst insulating layer disposed on the first surface of the protectionmaterial, and the redistribution layer (RDL) is disposed on or embeddedin the first insulating layer.
 13. The package structure of claim 1,wherein the redistribution layer (RDL) includes at least one integratedpassive device (IPD).
 14. The package structure of claim 13, wherein theintegrated passive device (IPD) is an inductor.
 15. The packagestructure of claim 1, the protection material has a first surface and asecond surface opposite to the first surface, the package structurefurther comprises a carrier, and the second surfaces of the transducerdevices and the second surface of the protection material are attachedto a surface of the carrier.
 16. A method for manufacturing a packagestructure, comprising: (a) disposing a plurality of transducer deviceson a carrier side by side, wherein each of the transducer devices has atleast one transducing region, and includes a die body and at least onetransducing element, the die body has a first surface and a secondsurface opposite to the first surface, the transducing region isdisposed adjacent to the first surface of the die body, the transducingelement is disposed adjacent to the first surface of the die body andwithin the transducing region; (b) forming a protection material tocover the transducer devices; (c) forming a cap structure to cover thetransducing region of the transducer device to form an enclosed space;and (d) forming at least one redistribution layer (RDL) to electricallyconnecting the transducer devices.
 17. The method of claim 16, whereinin (a), the first surface of the die body faces the carrier.
 18. Themethod of claim 16, wherein in (a), the second surface of the die bodyfaces the carrier.
 19. A method for manufacturing a package structure,comprising: (a) forming at least one redistribution layer (RDL) on acarrier; (b) electrically connecting a plurality of transducer devicesto the redistribution layer (RDL), wherein each of the transducerdevices has at least one transducing region, and includes a die body, atleast one transducing element and a cap structure, wherein the die bodyhas a first surface and a second surface opposite to the first surface,the transducing region is disposed adjacent to the first surface of thedie body, the transducing element is disposed adjacent to the firstsurface of the die body and within the transducing region, and the capstructure covers the transducing region of the transducer device to forman enclosed space; and (c) forming a protection material to cover thetransducer devices.
 20. The method of claim 19, wherein after (a), themethod further comprises: (a1) forming a plurality conductive pillars onthe redistribution layer (RDL); wherein in (b), the transducer devicesare electrically connected to the conductive pillars.